| 摘要 |
PURPOSE:To improve the efficiency of photoelectric conversion by forming an i layer by the glow discharge decomposition of disilane and controlling initial film formation so that the depth of infiltration to the i layer of boron is brought to a fixed value or less. CONSTITUTION:A plate in which a transparent conductive thin-film is evaporated on glass is used as a substrate, and films are formed on the plate in order of a p layer, an i layer and an n layer, thus constituting a p-i-n junction. The p layer is formed and the i layer is shaped, but the concentration distribution of boron is controlled by setting conditions for the initial film formation of the i layer at that time, and the depth of infiltration to the i layer of boron is brought to a fixed value or less. |
