| 摘要 |
PURPOSE:To constitute a three-dimensional semiconductor device by forming a recrystallizing layer on an insulating layer selectively applied on a semiconductor substrate and laminating an FET in which source-drain regions are disposed in the crystal and a gate electrode on the crystal. CONSTITUTION:A polycrystalline silicon layer formed to an n type silicon substrate 1 is irradiated with laser beams 7 to shape a single crystal silicon layer 8. A gate insulating layer 9 consisting of SiO2 and a gate electrode 10 composed of DOPS are shaped on the layer 8, and boron in a BSG layer 11 is diffused into the layer 8 to form a P-MOS16 consisting of source can drain each region 14, 15. Polycrystalline silicon 17 is applied selectively on the whole surfaces of layers 12, 18, and irradiated with beams 7 to shape a single crystal silicon layer 19, and an N-MOS25 composed of a gate electrode 21 and drain and source each region 23, 24 is formed in the same manner as the P-MOS. Electrode forming sections 8c, 19b are heated and alloyed, thus completing a CMOS consisting of the MOSs 25, 16. |
