| 摘要 |
PURPOSE:To contrive to attain a vapor phase epitaxial growth process in a low temperature by a method wherein a region to absorb a pollutant is formed in the neighborhood of an active region on the surface of a substrate. CONSTITUTION:N<+> type buried layers 2, P<+> type channel stopper layers 3 and silicon nitride films 4 are formed on the surface of a P<-> type substrate 1. Then epitaxial growth is performed doping with phosphorus to form N<-> type layers 5 and polycrystalline silicon layers 6. Then the regions of the polycrystalline silicon layers 6 are etched to be removed by the degree of half. Then the regions of the polycrystalline silicon layers are oxidized selectively to convert the silicon layers 6 into silicon oxide films 7. Heat treatment of the polycrystalline silicon layer can be attained in shorter hours as compared with a single crystal silicon layer. Then an N<+> type layer 8 of emitter, a P<+> type layer 9 of base and an N<-> type layer 10 of collector are formed. |
