| 摘要 |
PURPOSE:To grow uniformly a semiconductor device in a vapor phase on many wafers by using a cylindrical high-melting material such as SiC or the like in forming a reaction vessel for vapor growth of the semiconductor material on the surface of the wafers and setting the wafers in parallel by many imposing jigs. CONSTITUTION:A cylindrical reaction vessel 13 is manufactured of a high melting material such as SiC or the like and a wafer support 16 is freely rotatably suspended by means of a hanger in said vessel. Many wafer imposing jigs 20 are horizontally or obliquely placed on the support 16 and many wafers are imposed thereon. The vessel 13 itself is heated by a resistance heater or high-frequency induction heater 17 and while the many wafers 14 are uniformly heated, a reactive gas is supplied from a nozzle 15. Since many wafers 14 are uniformly heated, the semiconductor material having a uniform thickness is grown at a high speed over the entire surface of the wafers 14. |
