发明名称 ION IMPLANTING DEVICE
摘要 PURPOSE:To implant an ion beam to the surface of a sample disc always at high implantation accuracy even if the diameter of the ion beam on the surface of the sample disc changes by installing a mask having a specific shape in front of a rotary sample disc in an ion implanting device. CONSTITUTION:A mask 40 which has the aperture width W larger than the width of a sample and smaller than the width of a sample disc 14, is insulated electrically from the disc 14, is grounded from the device of an ion implanting device and scans in the same direction as the direction of the disc 14 cooperatively with said disc is provided in the direction where at least rectilinear movement is made just in front of the disc 14 of the ion implanting device having a mechanical scanning mechanism which implants an ion beam 12 to the disc 14 while rotating the disc and moving rectlinearly the disc in the radial direction thereof. The aperture W of the mask 40 exists even if the focus of the ion beam moves from 12 to 12' and the beam diameter changes from 47 to 47' and therefore the ions are implanted always in the specified area of a doughnut shape having the width W.
申请公布号 JPS60152673(A) 申请公布日期 1985.08.10
申请号 JP19840008839 申请日期 1984.01.20
申请人 NIPPON DENKI KK 发明人 OZAWA TOSHIHARU
分类号 C23C14/48;C23C14/02;C23C14/04;C23C14/54;H01J37/317 主分类号 C23C14/48
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