| 摘要 |
PURPOSE:To obtain desired tunnel probability by heating a gate insulating film consisting of a transition metal oxide/SiO2 on an Si substrate in an O2 atmosphere and thickening the thickness of an SiO2 film. CONSTITUTION:An oxide film 5 is formed on the surface of a P type Si substrate 1, and an element forming region (d) section is removed. A Ta2O5 film 7 and an SiO2 film 6 are shaped on the substrate 1 through discharge in a gas atmosphere containing not less than 9mol% O2 gas by using a Ta target. An Si3N4 film 3 and a polycrystalline Si film 4 are deposited through a vapor phase growth method, sections on the outsides of a gate section are removed, and P ions are implanted through the film 3 to form source and drain diffusion layers 8 while being also doped to the polycrystalline silicon gate 4. A phosphorus glass film 9 is shaped, and a wiring layer 11 is formed through heat treatment in a hydrogen atmosphere. |
