| 摘要 |
PURPOSE:To increase the speed of an I<2>L gate by forming an N type diffusion region having concentration higher than a base region in an I<2>L.PNP transistor just under a base region in an I<2>L.NPN transistor. CONSTITUTION:A buried N type diffusion region 2 is formed in an silicon substrate 1, and an impurity is diffused to a section except a base region in an I<2>L.PNP transistor to shape an N type diffusion region 12. The diffused impurity is diffused reversely up to a section just under a base region 6 in an I<2>L.NPN transistor through subsequent epitaxial growth and heat treatment, and a high- concentration N type region 12 is shaped just under the base region 6 in the I<2>L.NPN transistor. The region 12 functions as a large current bias region, and is useful for increasing the speed of an I<2>L gate. |
