SEMICONDUCTOR PRESSURE SENSOR

摘要

PURPOSE:To remove a stepped section in a metallic thin-film wiring by constituting the wiring connected to a resistance element region by a metallic thin-film directly applied on the surface of a semiconductor substrate and forming another conduction type impurity adding layer to the semiconductor substrate on the lower side of the metallic thin-film. CONSTITUTION:Diffusion layers 8 in boron are shaped coupled with both ends of a P type diffusion resistance element region 2 formed to a diaphragm section in an N type semiconductor substrate 1. Metallic thin-films 9 are applied to the greater parts of the surfaces of the P type diffusion layers 8, and there are bonding pads 7 at another ends of the metallic thin-films 9. The surfaces of the semiconductor substrate 1 not coated with the metallic thin-films 9 are protected by silicon oxide films 3.