| 摘要 |
PURPOSE:To obtain a semiconductor memory device which is hard to cause malfunction and characteristic deterioration due to absorption of ionizing radiation by utilizing a P-channel enhancement-type MOS transistor for a transfer gate. CONSTITUTION:This device is constituted of a memory cell and a transfer gate; the former is constituted in such a way that a P-channel MOS transistor is connected to an N-channel MOS transistor in serial, a serial connecting point 1 of one set of transistors MOS1 and MOS3 is connected to a common connecting point of the other set of transistors MOS2 and MOS4 and in these two sets their gates are connected in common. The latter consists of two P-channel enhancement MOS transistors MOS7 and MOS8 in which a source is connected to a drain between serial connecting points 1 and 2 of a CMOS transistor and data lines DATA and -DATA and a gate is connected to a word line Word (A/i). |
