发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To know a relief address easily by constituting the device so that the specific pin status will change only for a defective address on the basis of the internal signal such as a redundancy selecting signal outputted when a defective address set beforehand is coincident with an inputted address in the specific mode. CONSTITUTION:A redundancy selecting signal phir is inputted to one input terminal of an AND gate circuit 16 as well as a redundant word driver 5s. On the other hand, when a special condition deciding circuit 15 connected to a control terminal 14 is impressed by a voltage at a high level, it outputs a detecting signal phic, which is inputted to the other input terminal of the AND gate circuit 16. As a result, when a defective address is accessed, an output of the AND gate circuit 16 becomes a high level, and a MOSFET18 is turned on. Consequently since a leak current runs in a control terminal 18, a relief address (defective address) can be signaled if this current is detected with external device.
申请公布号 JPS60151899(A) 申请公布日期 1985.08.09
申请号 JP19840007135 申请日期 1984.01.20
申请人 HITACHI SEISAKUSHO KK 发明人 OOISHI KANJI;KAWAMOTO HIROSHI
分类号 G06F12/16;G06F11/00;G11C29/00;G11C29/04 主分类号 G06F12/16
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