| 摘要 |
PURPOSE:To obtain a lateral type transistor, in which the rise of hFE is realized by the same pattern size, by forming another conduction type second base region, which is shaped so as to function as one part of a base region and has concentration lower than an emitter region and a junction deeper than the emitter region, on the inside of the emitter region. CONSTITUTION:An N<+> type buried region 2, P<+> type buried regions 3, an N type epitaxial layer 4 and insulating isolation regions 5 are formed to a P type substrate 1. An N type impurity is diffused, and an N type second base region 6 functioning as one part of an internal base region in a predetermined emitter region for a lateral type P-N-P transistor and an N type first base contact region 6' into a prescribed base contact region are formed simultaneously. The regions 6, 6' are shaped at that time so that their concentration is made lower than afterward formed P type emitter regions 7 and their junctions are made deeper than the regions 7. A P type impurity is diffused to shape emitter and collector regions 7 and 7', an N<+> type impurity is diffused similarly to shape an N<+> type second base contact region 8, and electrode patterns 10-12 in emitter. base and collector regions are formed. |
