| 摘要 |
PURPOSE:To prevent the damage generating on a thin insulating film by an ion implantation by a method wherein impurities are implanted by performing an ion implantation method after a polycrystalline silicon film has been deposited on the insulating film formed on a semiconductor substrate. CONSTITUTION:A thin insulating film 2 is formed on the surface of a semiconductor substrate 1. Then, a thin polycrystalline silicon film 3 of 1,000Angstrom or below is deposited on the thin insulating film 2, and an ion implantation is performed thereon for the purpose of controlling the surface density of the semiconductor substrate 1. Subsequently, a polycrystalline silicon film 4 is deposited again, and a polycrystalline silicon film of the sdesired film thickness including the thin polycrystalline silicon film 3 is formed. Through these procedures, the damage on the insulating film caused by ion implantation can be prevented, and the lowering of the yield of production and the reliability of IC and LSI caused by the damage on insulating film can also be suppressed. |
