THREE-TERMINAL SEMICONDUCTOR DEVICE

摘要

A semiconductor device with performance in the 10<-><1><2> second range has an emitter region (1) with a large source of carriers and a low barrier in a thin section (8) whose thickness is less than the length of the mean free path of an electron. This thin section is in contact with a high conductivity base region (2) having a width in the vicinity of the length of the mean free path of an electron providing thereby hot electron transfer to a collector region (3) having a high barrier.