| 摘要 |
PURPOSE:To obtain the captioned ion source with melting point less than 900 deg.C and capability for generating impurity ions for p type, n type and isolation, by using the quaternary alloy Pd-Si-Be-B whose composition ratio is within a specified range. CONSTITUTION:A liquid metal ion source in the quaternary alloy of Pd-Si-Be-B and is constituted in the composition ratio of 92-94:4-5:1.5-2:0.4-0.6wt%. Out of this quaternary alloy, Pd is the parent metal, Si becomes an n type impurity against III-V group compound semiconductor and Be becomes a p type impurity. Furthermore, B becomes isolation impurity when manufacturing a device on a substrate. |
