| 摘要 |
<p>In a thermal head having a substrate (1) and a heating resistor (3) of thin film type formed thereon, the heating resistor (3) is a deposited metal oxide film essentially consisting of ruthenium oxide and an oxide of at least one metal M selected from the group consisting of Ca, Sr, Ba, Pb, Bi and Tt. The deposited metal oxide film has an atomic ratio M/Ru of the metal M to ruthenium of 0.6 to 2.</p> |
