发明名称 MAKING OF RESIST PATTERN AND DRY FILM RESIST SUITABLE FOR IMPLEMENTATION THEREOF
摘要 <p>In the production of resist patterns by applying a photosensitive, positive-working resist layer based on photodegradable polymers to a substrate, image-wise exposing the resist layer to actinic light and removing the exposed layer portions to develop the resist pattern, a photosensitive resist layer is used which is made of a poly(diacetylene) which is, in particular, soluble. The invention also relates to dry film resists with a temporary, dimensionally stable layer base, a photosensitive photodegradable resist layer applied thereto and based on poly(diacetylenes), which are preferably soluble, and, optionally, a top layer on the photosensitive resist layer.</p>
申请公布号 JPS60150048(A) 申请公布日期 1985.08.07
申请号 JP19840244728 申请日期 1984.11.21
申请人 BASF AG 发明人 RAINHORUTO IYOTSUTO REIRAA;GEERUHARUTO BUEGUNAA;MIHIAERU MIYURAA
分类号 G03C1/72;G03C5/00;G03F7/004;G03F7/039;G03F7/26 主分类号 G03C1/72
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