发明名称 C-MOS basic cells arrangement.
摘要 <p>There is disclosed a semiconductor integrated circuit device in which the gate of a MOSFET of one circuit of the P channel MOSFET is connected to the gate of a MOSFET of the other circuit of the P channel MOSFET, and the gate of a MOSFET of one circuit of the N channel MOSFET is connected to the gate of a MOSFET of the other circuit of the N channel MOSFET.</p>
申请公布号 EP0150423(A2) 申请公布日期 1985.08.07
申请号 EP19840115654 申请日期 1984.12.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HAJI, YASUTAKA C/O PATENT DIVISION
分类号 H01L21/8234;H01L21/82;H01L27/088;H01L27/118;(IPC1-7):H01L27/02 主分类号 H01L21/8234
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