| 摘要 |
<p>PURPOSE:To attain a large capacity and high speed by using a dummy cell structured in the same way as a memory cell and by generating a reference voltage used at the time of reading on the basis of a current flowing in this dummy cell. CONSTITUTION:A reference voltage generation circuit is configured by an element Q66 (dummy cell) which has the same structure and characteristics as the memory cell where a gate is connected to a power source and the source is connected to a grounded potential, a push-pull inversional amplifier IV4, IGFETQ65 and feedback resister Rfs. If a gate length is greater than designed values and the current flowing in the memory cell becomes less than the designed values, in case of selecting the memory cell under a ''1'' condition, the difference between output Vout of the push-pull inversional amplifier IV3 and a reference voltage VREF becomes [Von6-VREF6], which is almost not different from a voltage difference [Von5-VREF5] where the gate length is made according to the size of the designed values, thereby giving no trouble to a comparison detector at the next step when the detector detects. When the gate length becomes shorter than the designed values, results can be obtained in the same way as stated above.</p> |
