| 摘要 |
PURPOSE:To obtain the titled device of construction that an element is formed to a semiconductor excellent in crystallinity, and that the bottom of the element is made of insulator, by a method wherein the element already formed to a semiconductor single crystal substrate is adhered to a supporting substrate via insulation film. CONSTITUTION:An SiO2 on the P-type single crystal Si substrate 1 is vertically opened by reactive sputter etching with CF4+H2, and then coated with CVDSi3N4 3. The Si3N4 3 is left on the side wall by etching again by the same method. The SiO2 2 is etch-removed by applying a resist mask 4. Next, an Si single crystal layer 5 is grown between the Si3N4 layer 3 with SiH2Cl2+HCl by using H2 as a carrier. Doping is performed suitably at this time. A MOSIC is provided in the layer 5 as required after removal of the mask 4, and is then protected with SiO2; thereafter, the element-forming surface is welded to a holding substrate 9 with solder glass 10, and the substrate 1 is removed by mechanical and chemical polishing, which removal is then stopped at the thickness of the layer 2. An SiO2 11 is formed at a lower temperature below the melting point of the glass 10, and the element-forming layer is covered, the whole of which is then fixed to the supporting substrate 13 with epoxy resin 12. Finally, the substrate 9 and the glass 10 are removed, resulting in completion. |
