| 摘要 |
Disclosed herein is a photoheating apparatus for heat-treating an object such as silicon semiconductor wafer in a flowing gas of a special composition. It comprises a container adapted to position the object therein, at least one part of the container being transparent, a heat-radiating lamp adapted to irradiate light onto the object through the transparent part of the container, a gas inlet and gas outlet formed through the wall of the container, and a gas flow dispersion barrier disposed within the container so as to confront the gas inlet, defining a plurality of gas through-holes and made of a transparent material. Owing to the provision of the gas flow dispersion barrier, the gas flow is kept uniform downstream the barrier. The photoheating apparatus is small in size and is capable of causing a reaction to proceed at a uniform rate on the whole surface of the object.
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