发明名称 Process for producing conductors for integrated circuits using planar technology
摘要 The invention relates to a process for producing conductors for integrated circuits using planar technology. According to this process, on a substrate is deposited an insulating material coating. A masking sheet is deposited on the insulating material coating and this sheet is cut to form windows corresponding to the conductors to be obtained. The insulating material sheet is etched facing the windows. A conductive material is deposited on the cut masking sheet. The masking sheet and the conductive material covering it are removed. This process consists of choosing a masking sheet having a first coating covering the insulating material coating and a second masking coating covering the first coating. The first coating is cut chemically facing the windows and after cutting the second masking coating, the edges of the first coating on the periphery of the windows are eroded by chemical cutting. Application to the production of planar integrated circuits.
申请公布号 US4533431(A) 申请公布日期 1985.08.06
申请号 US19840570506 申请日期 1984.01.13
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 DARGENT, BRUNO
分类号 H01L21/302;G11C11/14;H01F41/34;H01L21/027;H01L21/3065;H05K3/04;H05K3/10;(IPC1-7):B44C1/22;C03C15/00;C03C25/06;C23F1/02 主分类号 H01L21/302
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