| 摘要 |
A novel multilayer lift-off pattern of positive and negative photoresist materials is provided. A positive first layer is deposited on a substrate and flood exposed before a subsequent layer of negative photoresist material is added on top of the positive photoresist material. An optional third layer of positive photoresist material may be added on top of the negative photoresist to provide the top layer. A window or aperture is provided in the top layer employing conventional mask, exposure and development techniques. The top of the bottom layer is plasma etched through the window or aperture so that the previously flood exposed bottom layer can be developed without affecting the layers deposited thereon. A deep undercut lift-off pattern is provided which is useful in the manufacture of Josephson junction devices employing low temperature metals as well as for the manufacture of semiconductor devices.
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