| 摘要 |
PURPOSE:To obtain a device characterized by a high speed operation, by using semiconductor layers, which are formed in longitudinal up and down direction as a collector, a base and an emitter. CONSTITUTION:On a P<-> substrate 11, an N<+>N<->P<+>N<+> structure is formed. Etching is performed to the substrate 11. The surface is coated by an N<-> layer 16. B is implanted vertically and a P<+> layer 17 is formed. Then the dug-out part in the substrate 11 is covered by SiO2 18. Compressing diffusion is performed. A collector layer 12a and a channel cutting part 17a are formed. A base layer 14a is formed so as to surround an emitter layer 15a. Then, only the exposed boundary part of the layers 14a and 15a is covered by the SiO2 18. N<+>, P<+> and N<+> ions are selectively implanted, and electrodes 19-21 are attached to the respective parts. In this constitution, lateral spread can be regulated, high degree of integration can be obtained, each part can be formed in a small size and bonding capacity can be decreased. Since the emitter is surrounded by the base, the feeding path of the base current is broad and the base resistance is low. |
