| 摘要 |
PURPOSE:To provide a thin film field effect transistor having better ON-OFF characteristics, by forming a recession in the underside of a holder in which an insulating substrate is arranged so that both the under faces are aligned, and by plasma-processing the substrate with the holder grounded, where the substrate is mounted in the underside of the conducting holder for the substrate and an amorphous Si thin film is deposited on the substrate surface with plasma to make an optoelectric transducer. CONSTITUTION:A substrate holder 10 and an insulating substrate 1 to be grown are arranged in a plasma CVD apparatus. That is, the holder 10 which is made of Al and has larger area than the insulating substrate 1 is grounded and forms a recession of depth d1 in the underside of the holder 10. The glass insulating substrate 1 of thickness d2 is housed in the recession and is secured firmly by holding members 11 and screws 12 positioned a the circumference. On that occasion, the depth d1 and thickness d2 are equalized so that the under face 10a of the holder 10 is aligned with the under face of the substrate. Thereafter, an amorphous Si thin film is deposited over the under face with plasma-processing and the substrate 1 is then removed. |
