| 摘要 |
PURPOSE:To reduce the scatter of element characteristics, and to contrive the improvement in controllability of the element characteristics by a method wherein a tunnel oxide film reduces the thickness of a base electrode formed thereon to less than a prescribed value. CONSTITUTION:A high melting point material is formed on an Si substrate 11 where a thermal oxide film 12 has been formed, and the first base electrode 13 and the wiring are patterned. Next, the second electrode 14 is formed of a Pb alloy film at a part of the electrode 13 where a junction is to be formed. This film thickness of this electrode 14 is set at 1,000Angstrom or less. This manner enables the grain diameter to be kept lower. Then, an oxide film is formed on the surface of the electrode 14, and further an insulation layer 15 is formed. The layer 15 is provided with an aperture 15' on the electrode 14, which art serves as the junction. A resist pattern for forming an opposite electrode is formed. Thereafter, the tunnel oxide film 17 is formed on the surface of the electrode 14. A Pb alloy is evaporated as the opposite electrode 16, and the pattern of the electrode 16 remains by lift-off, resulting in the completion of the Josephson junction. |
