| 摘要 |
PURPOSE:To enable the increases in mutual conductance with good efficiency by a method wherein the end of a gate electrode at the folded part of the gate electrode and the opposed ends of a source electrode and a drain electrode are all arranged concentrically. CONSTITUTION:The gate electrode 32 is formed in meanders on the acting region of a semiconductor substrate 31. The source electrode 34 and the drain electrode 35 are arranged on both sides of this electrode 32, and the ends of these electrode 34 and 35 opposed to the electrode 32 are of the same shape as that of the electrode 32. Besides, these ends are all arranged in concentric form in the folded parts thereof. High concentration regions 36 and 37 of the same conductivity type as that of the acting region are selectively formed in the substrate immediately under the electrodes 34 and 35, respectively. Such a construction makes the distance between the respective ends or regions equal to that at a linear section and enables the mutual conductance to be increased with the gate width with good efficiency. |
