| 摘要 |
<p>PURPOSE:To prevent the crack and stripping of film by a method wherein a semiconducltor wafer is diced after grooves are provided on both sides of a dicing line of a film on the surface of said wafer and in the periphery of chip element regions. CONSTITUTION:Before the dicing process, the grooves 7 are provided by removing oxide films 2 on both sides of the dicing line 4 and in the periphery of the semiconductor element regions 6. The crack generating by the distortion caused by a dicing saw stops at the groove 7, not reaching the element region 6. The crack and stripping of the oxide film 2 do not generate in the region 6, and thus a chip can be obtained with good yield.</p> |
