| 摘要 |
PURPOSE:To obtain the extremely fine pattern of laminated thin films by a method wherein an organic high molecular thin film and a chargeable thin film are laminated on a semiconductor substrate and the charged fine particles are stuck to the predetermined region of said chargeable thin film, which is used as a mask to remove an exposed part of the laminated thin films by plasma etching. CONSTITUTION:An Si substrate 1 is coated with a thin layer 2 of an organic high molecular material consisting of phenol novolak, polyimide, etc. and a thin layer 3 of insulating zinc oxide is laminated on the layer 2. Then, corona discharge is performed in a dark place to charge the layer 3 into positive. Next, the predetermined region of the layer 3 is irradiated with an electron beam to charge only this region into negative. And the fine particles 4 of phenol novolak resin diameters of whicn are about 0.01mum are sprayed over the whole surface while charging the particles into positive so as to stuck them only to the region. After that, by using the fine particles 4' stuck to said region as a mask, oxygen plasma etching is performed and the thin layers 3 and 2 of the exposed part are removed in order. Then, the extremely fine pattern composed of the thin layers 2' and 3' is left on the substrate. |
