| 摘要 |
PURPOSE:To enable to isolate the element regions and to contrive a simplification of work an a higher-density formation of the integrated circuit by a method wherein recessed places are formed in the silicon substrate, and after that, the first silicon oxide film is formed on the whole surface of the silicon substrate by performing a thermal oxidation, then after the first silicon oxide film is all removed, the interiors of the recessed places are filled with the second silicon oxide film. CONSTITUTION:An impurity having the same conductive type as that of a silicon substrate 1 is ion-implanted in the bottom parts of recessed places 6 formed in the silicon substrate 1 and ion implanted layers 7 are formed. Then, a silicon oxide film 8 is formed on the whole surface. A heat treatment is performed on the silicon substrate 1 in an atmosphere of nitrogen and after the crystal defect is made to reduce, the silicon oxidd film 8 covering the surface of the silicon substrate 1 is all removed. After that, a heat treatment is again performed on the silicon substrate 1 in a vapor-containing atmosphere. Then, a resist 10 is applied on a silicon oxide film 9 in such a way that the surface of the resist 10 becomes flat. Lastly, an etching is performed on the resist 10 and the silicon oxide film 19 until the silicon substrate 1 is made to expose on such a condition that the etching rates to the resist 10 and the silicon oxide film 9 become equal to each other and the semiconductor device is completed. |
