| 发明名称 |
Control of the hydrogen bonding in reactively sputtered amorphous silicon |
| 摘要 |
A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a DC voltage bias to the film's substrate during deposition.
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| 申请公布号 |
US4533450(A) |
申请公布日期 |
1985.08.06 |
| 申请号 |
US19840648012 |
申请日期 |
1984.09.06 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING CO. |
发明人 |
MOUSTAKAS, THEODORE D. |
| 分类号 |
C23C14/00;H01L31/18;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/00 |
| 代理机构 |
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| 地址 |
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