| 摘要 |
PURPOSE:To easily obtain the titled device having a semiconductor layer excellent in crystallinity on an insulator, by a method wherein an element is formed to a semiconductor single crystal substrate determined by the depth of an isolation groove, and then adhered to a supporting substrate via insulation film. CONSTITUTION:Vertical grooves of micro width are provided in the Si substrate 1, and covered with SiO2 2a and Si3N4 2b, and an SiO2 2c is produced on the surface by filling the grooves with poly Si 4. After removal of the films 2a and 2b, a gate oxide film 5, a poly Si gate electrode 7, and a source-drain 8 are formed and covered with an insulation film 9, and an Al wiring 10 is attached. They are covered with SiO2 13, and a holding plate 12 is welded with solder glass 14; then, the substrate is removed by polishing, which removal is stopped at the groove bottom. After adhesion of a CVDSiO2 17 at a lower temperature below the melting point of the glass 14, the whole is fixed by adhesion to a supporting substrate 16 with epoxy resin 15, and the holding plate 12, the glass solder 14, and the SiO2 13 are removed by etching, when the semiconductor layer excellent in crystallinity is easily formed on the insulator, resulting in the improvement in element characteristics. Besides, the thickness of the element-forming layer can be freely changed by the depth of the isolation groove. |
