| 摘要 |
PURPOSE:To improve sensitivity to beams within a specific wavelength range by making internal electric-field intensity in the vicinity of a P layer or an N layer markedly more intense than that in other sections in an I layer in the internal electric-field distribution in the I layer in P-I-N structure. CONSTITUTION:A transparent electrode 2 consisting of an ITO film is formed on a glass substrate 1 through an electron beam evaporation method. A P type a- SiC:H film 3 in 100Angstrom film thickness, an I-type a-SiH film 4 in 5,000Angstrom film thickness and an N type a-Si:H film 5 in 300Angstrom film thickness are shaped on the transparent electrode in succession through a plasma CVD method, and an Al electrode 6 is formed on the film 5 through the electron beam evaporation method in a vacuum. A boron compound such as diborane or a phosphorus compound such as phosphine is added on the formation of the film 4 at that time, and internal electric-field intensity in the vicinity of the film 3 or the film 5 in the film 4 is made more intense than that of other sections in the layer 4. |
