| 摘要 |
PURPOSE:To suppress the generation of a parasitic transistor and leakage current in the titled device by a method wherein impurities are introduced in an insulating film for element isolation formed in one main surface of the semiconductor substrate and a layer structure, wherein a center to capture electrons is existing in high concentration, is formed. CONSTITUTION:A silicon oxide film 205 for element isolation is formed on a P<+> type region 204 using a silicon nitriding film 203 as a mask, and after that, a resist film 206 is applied thereon, a part of the resist film 206, wherein impurities of phosphorus or boron, etc., are introduced, is selectively removed, and an impurity inclusion layer 209 capable of becoming a center to capture electrons is formed in the interior of the film 205 by performing an ion-implantation 207 of impurities. For this reason, electrons in electron-hole pairs, which generate by an ionizing radiation, are captured. As a result, the augmentation of positive charge in the insulating film is suppressed, and moreover, the recoupling of the electron-hole pairs is promoted and the generation of an interfacial level in the insulating film-semiconductor substrate interface can be suppressed. |
