| 摘要 |
PURPOSE:To prevent the volatilization of electrons from a floating gate electrode by using insulating films formed without depending upon thermal oxidation as a selective gate insulating film in a semiconductor nonvolatile memory and an insulating film on and in the vicinity of the floating gate electrode. CONSTITUTION:n<+> Conduction type source region 12 and drain region 13 are formed on the surface of a p type semiconductor 11. A gate oxide film 17 consisting of silicon dioxide is shaped on a first channel L3 between the source- drain regions. A floating gate electrode 14 composed of polycrystalline silicon and an insulating film 18 consisting of silicon dioxide, which is formed by oxidizing the floating gate electrode 14 and shaped on the floating gate electrode and so as to surround the periphery of the floating gate electrode, are formed on a second channel L4 through a thin gate oxide film 16. A silicon dioxide film 19 shaped at a high temperature is formed on the gate oxide film 17 ane the insulating film 18, and a selective gate electrode 15 is formed on the film 19. |
