| 摘要 |
PURPOSE:To improve the degree of integration by forming a resistor in an isolation region. CONSTITUTION:Active elements Q1, Q2 are formed in an element forming region a1 isolated by an isolation region a2 while a resistor Rb is shaped to the isolation region a2. The resistor Rb is formed by shaping an n plus type diffusion layer 20c to a semiconductor section in the isolation region a2. Accordingly, the resistor requiring a space put out of shape can be formed in an integrated circuit device without lowering the degree of integration of the whole and damaging the regularity of a circuit pattern. |
