| 摘要 |
PURPOSE:To constitute a precharge or predischarge circuit for a semiconductor integrated circuit without increasing the number of types of a macro cell by a method wherein the macro cell for a clock gate or a tri-state buffer is used as a circuit for precharge or predischarge. CONSTITUTION:In the precharge circuit using a P type channel transistor, when the potential of a signal for precharge, which is sent in the circuit of A, rose, the circuit of B is precharged, while the predischarge circuit using an N type channel transistor, when the potential of a signal for predischarge, which is sent in the circuit of A, rose, the circuit of B is predischarged. In such a way, a precharge or predischarge circuit for a master slice type semiconductor integrated circuit can be easily manufactured without increasing the number of types of a macro cell. |
