| 摘要 |
PURPOSE:To form a Schottky junction, which also resists heat treatment and has excellent characteristics, by forming the Schottky junction to a compound semiconductor constituted by Al.Ga.As while using Al as a constituent as an electrode metal. CONSTITUTION:A high electron-mobility transistor is formed by a compound semiconductor constituted by II-V group elements of Al.Ga.As. A Schottky junction is shaped to an n-GaAlAs layer 3 as the compound semiconductor constituting the high electron-mobility transistor while using Al as the constituent of the layer 3 as a gate 4. The Schottky junction is thermally treated at a temperature lower than the melting point of Al. |
