发明名称 SEMICONDUCTOR VARIABLE CAPACITANCE ELEMENT
摘要 PURPOSE:To increase the noise withstanding voltage (electrostatic withstanding voltage) of a variable electrode practically sufficiently, and to improve utility and mass productivity by selecting the junction withstanding voltage of a Pn junction connected to a capacitance electrode to a low value. CONSTITUTION:A channel cut 16 in a P+ diffusion region is formed around a substrate surface in a P well 14, and a capacitance electrode 20 is constituted by connecting the P well 14, an N type diffusion region 15 and a shield electrode 13. A distance 22 between a channel cut 17 in an N+ diffusion region surrounding the periphery of the P well 14 and the P+ channel cut 16 is adjoined within 4mum. A P type diffusion region 19 isolates an N type diffusion region 18 as a capacitance electrode from a substrate 11. A protective circuit is inserted between a variable electrode 21 lead out of the region 18 and an external terminal.
申请公布号 JPS60147169(A) 申请公布日期 1985.08.03
申请号 JP19840002470 申请日期 1984.01.10
申请人 SEIKO DENSHI KOGYO KK 发明人 HATSUTORI YOSHIO
分类号 H01L21/822;H01L27/04;H01L29/94;(IPC1-7):H01L29/94 主分类号 H01L21/822
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