| 摘要 |
PURPOSE:To prevent the generation of the breaking of a gate insulating film even when the gate insulating film in a MOS semiconductor device is thinned sufficiently, and to increase density and the degree of integration by connecting a drain region to a resistance element and a first MOSFET and forming a second MOSFET in which a source region is connected to a semiconductor substrate. CONSTITUTION:A MOSFET12 making surge voltage escape, a MOSFET13 with a gate insulating film thicker than 200Angstrom and a MOSFET14 with a thin gate insulating film in 200Angstrom or less, beaking thereof is prevented by these MOSFETs 12, 13, are formed. It is important that there are both the MOSFET12 and the MOSFET13 and the MOSFET12 generates bipolar operation earlier than the MOSFET13, and the MOSFET12 can simply be operated early by arranging the MOSFET12 where nearer to a diffusion resistor more than the MOSFET13. The potential of a substrate in the vicinity of a drain is elevated by capacitive coupling and a resistance component 24 by surge voltage generated in a drain region 21, and electrons are fed to the substrate from a source region 22, thus resulting in bipolar operation. |
