| 摘要 |
PURPOSE:To lower a noise level by a single longitudinal mode, and to improve linearity in current-optical output characteristics by forming a rectangular groove reaching to a semiconductor substrate to a semiconductor layer containing a current stopping layer having a conduction type different from the semiconductor substrate and hanging down an active layer into the groove in curved manner. CONSTITUTION:First semiconductor layer 31, such as an N-GaAs current stopping layer 32, an Al0.45Ga0.55As layer 33 having not less than 0.1 AlAs concentration and a GaAs layer 34 are grown on a semiconductor substrate 30 such as a P-GaAs substrate having a face orientation {100} in succession, and a rectangular groove 35 reaching to the semiconductor substrate 30 is formed at the central section of the first semiconductor layers 31 through anisotropic etching using Cl2 gas. A second semiconductor layer 35 such as a P-Al0.45Ga0.55 clad layer, an active layer 37 such as an un-doped Al0.13Ga0.87As active layer and third semiconductor layers 38, such as an N-Al0.45Ga0.55As clad layer 39 and an N-GaAs contact layer 40 are grown on the first semiconductor layers 31 and the exposed semiconductor substrate 30 so as to coat the groove 35, and lastly an N side electrode 41 is formed at an end on the third semiconductor layer 38 side and a P side electrode 42 at an end of the semiconductor substrate 30 side, thus completing a semiconductor laser device. |
