发明名称 METHOD OF PRODUCING SEMICONDUCTOR DEVICE
摘要 The method comprises depositing a first layer (10) consisting of a photoresist on a semiconductor substrate (12), and selectively exposing to light and developing said layer (10) to form a photoresist pattern (10) having at least one window, performing a first process to form a first part (16) of a device in the said window, blanket depositing a second layer (20) of a second resist, where said second resist is relatively insoluble in solvents dissolving said photoresist pattern (10) removing said photoresist pattern (10) and performing a second process to form a second part of a device in the area formerly covered by the photoresist pattern (10). …<??>The method substantially eliminates overlay errors.
申请公布号 JPS60147122(A) 申请公布日期 1985.08.03
申请号 JP19840149852 申请日期 1984.07.20
申请人 INTERN BUSINESS MACHINES CORP 发明人 EDOWAADO KAAMIN FUREDERITSUKUSU;HARITSUSHIYU ENU KOTETSUCHIYA
分类号 H01L21/306;H01L21/027;H01L21/265;H01L21/266;H01L21/312;H01L21/316;H01L21/8238;H01L27/092 主分类号 H01L21/306
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