发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
The method comprises depositing a first layer (10) consisting of a photoresist on a semiconductor substrate (12), and selectively exposing to light and developing said layer (10) to form a photoresist pattern (10) having at least one window, performing a first process to form a first part (16) of a device in the said window, blanket depositing a second layer (20) of a second resist, where said second resist is relatively insoluble in solvents dissolving said photoresist pattern (10) removing said photoresist pattern (10) and performing a second process to form a second part of a device in the area formerly covered by the photoresist pattern (10). …<??>The method substantially eliminates overlay errors. |
申请公布号 |
JPS60147122(A) |
申请公布日期 |
1985.08.03 |
申请号 |
JP19840149852 |
申请日期 |
1984.07.20 |
申请人 |
INTERN BUSINESS MACHINES CORP |
发明人 |
EDOWAADO KAAMIN FUREDERITSUKUSU;HARITSUSHIYU ENU KOTETSUCHIYA |
分类号 |
H01L21/306;H01L21/027;H01L21/265;H01L21/266;H01L21/312;H01L21/316;H01L21/8238;H01L27/092 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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