| 摘要 |
PURPOSE:To simplify processes, and to realize an element having the high degree of integration and high reliability by arranging first and second electrodes on a plane at an interval of 1,000Angstrom or less, forming the first and second electrodes, which are connected while a third electrode is stretched between the first and second electrodes or stacked in a stratiform manner through an insulating layer, and forming structure in which the third electrode is stretched across the side walls of the first and second electrodes and the first and second electrodes are connected with each other. CONSTITUTION:Two superconductor electrode layers 21, 22 are superposed through an insulating layer 25, and the end sections of the layers 21, 22 are sloped and connected to a control electrode 20 through tunnel barrier layers 26, 27. When quasi-particles are injected to the third electrode 20 from the first electrode 22 through the tunnel barrier layer 27, tunnel currents flowing through the third electrode 20 and the secon electrode 21 through the tunnel barrier layer 26 can be increased because the energy gap of the electrode 20 reduces. A range in which quasi-particles diffuse can be determined by the thickness of the insulating layer 25. According to the structure, since the tunnel barrier layers 26, 27 can be manufactured simultaneously, conventional two-time barrier forming processes are reduced to one time, and processes are simplified, thus improving accuracy. |
