| 摘要 |
PURPOSE:To prevent generation of damage on a conductive layer and a semiconductor substrate by a method wherein, among multilayer resist films, an undercut etching is performed on the third layer film, the intruding of a high melting point metal film generated by sputtering on the side face of a pattern hole is cut off, and the removal of an unnecessary high melting point metal film conducted when a lift-off method is performed is simplified. CONSTITUTION:A multilayer resist film to be used for a prescribed lift-off is formed. A high melting point metal film 14 is formed using a high melting point metal such as tungsten silicide, for example, and a gate electrode 15 is constituted on a conductive layer having exposed center part. A sufficient undercut 11a is formed on a positive type photoresist 11, and the effect of intruding of the high melting point metal when a sputtering is performed is remarkably relieved. Also, the conductive layer 2 is covered by a titanium film 9, and as said conductive layer 2 is almost not etched, and the possibility of having damage when a reactive ion etching is performed on a silicon nitride film 10 can be removed. Besides, the titanium film 9 and silicon nitride films 10 and 12 of the multilayer resist can be removed easily using an aqueous solution of hydrofluoric acid, the multilayer can be removed, and the unnecessary high melting point metal film 14 adhered to the upper surface of the multilayer resist can also be removed integrally. |
