| 摘要 |
PURPOSE:To establish an excellent connection between high-layer and low-layer transistors and thereby realize a semiconductor device with a highly reliable connection feature by a method wherein connection between the lower-layer and upper-layer transistors is established by the activation layer that is the base body of the upper-layer transistor. CONSTITUTION:A lower-layer transistor is formed on a P type Si substrate 21. Next, the entire surface is covered by an inter-layer insulating film 26 and a connecting hole 27 is provided at an electrode takeout region in the lower-layer transistor, whereafter a polycrystalline Si film 28 is formed. A process follows wherein the Si film 28 is annealed into a single crystal by exposure to a laser or electron beam. An Si film 29, insulating film 30 for isolating elements, and then, on the Si film 29, a gate oxide film 31 and gate electrode 32 are formed. A B-diffused layer 3 is formed and an upper-layer transistor is built. The entire surface is covered with an insulating film 34 wherein connecting holes are provided. A metal layer 35 is formed for the completion of a C-MOS inverter. |
