发明名称 LICHT EMITTIERENDER CHIP UND DAMIT ARBEITENDE OPTISCHE KOMMUNIKATIONSVORRICHTUNG
摘要 This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.
申请公布号 DE3502326(A1) 申请公布日期 1985.08.01
申请号 DE19853502326 申请日期 1985.01.24
申请人 HITACHI,LTD. 发明人 NAKA,HIROSHI;SEKO,ICHIRO;KOBAYASHI,SHUJI;HANEDA,MAKOTO
分类号 G02B6/42;H01S5/00;H01S5/02;H01S5/227;H04B10/00;H04B10/40;H04B10/50;H04B10/60 主分类号 G02B6/42
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