发明名称 |
LICHT EMITTIERENDER CHIP UND DAMIT ARBEITENDE OPTISCHE KOMMUNIKATIONSVORRICHTUNG |
摘要 |
This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible. |
申请公布号 |
DE3502326(A1) |
申请公布日期 |
1985.08.01 |
申请号 |
DE19853502326 |
申请日期 |
1985.01.24 |
申请人 |
HITACHI,LTD. |
发明人 |
NAKA,HIROSHI;SEKO,ICHIRO;KOBAYASHI,SHUJI;HANEDA,MAKOTO |
分类号 |
G02B6/42;H01S5/00;H01S5/02;H01S5/227;H04B10/00;H04B10/40;H04B10/50;H04B10/60 |
主分类号 |
G02B6/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|