| 摘要 |
PURPOSE:To obtain excellent heat resistance and etching resistance by postbaking a resist coating substrate after completing a pattern exposure and development by emitting far ultraviolet rays. CONSTITUTION:After resist solution is coated completely, the resist is prebaked to perfectly remove a solvent in the resist film. After prebaking, the resist is patterned by employing a suitable exposing method. After the exposure, development is performed, and the resist film of exposed area is dissolved and removed. Subsequent to the development, postbaking step is executed to strengthen the resist. For example, the resist is postbaked on a hot plate at 80-140 deg.C for 20- 100sec by emitting far ultraviolet rays having a wavelength of 253.7nm from a low pressure mercury lamp. |
