| 摘要 |
PURPOSE:To obtain a recording device having excellent recording density and nonvolatile property by properly implanting and fixing a ferromagnetic material grain on the prescribed lattice points of a nonmagnetic material and providing a line for random writing and reading when passing through lattice points. CONSTITUTION:A resist film 1 is formed on a surface of a nonmagnetic substrate 1, and holes 1b are regularly drilled, thereby forming lattice points. After a ferromagnetic field is vertically applied to the substrate 1, ferromagnetic material grains are blown by placing them on a carrier gas to implant on the hole 1b, the resist film is removed. Then an insulating film 2 is vapor-deposited on the substrate 1 to fix ultrafine grains. By utilizing a lithography, a reading line 2a passing through lattice points is made, and by vapor-depositing an insulating film 3 on the line 2a, the 1st writing line 3a is made thereon. By vapor-depositing an insulating film 4 on the line 3a, the 2nd writing line 4a is made thereon. Thus a recording device having excellent nonvolatile property and recording density can be obtained. |
