| 摘要 |
PURPOSE:To obtain stable characteristics by reduction in ON voltage of elements due to the variation in pressure by a method wherein a metal film well- conductive and difficult of oxidation is formed on the surface of a cathode electrode in press-contact of an electrode plate to the cathode electrode. CONSTITUTION:An n type base nB layer 1, a p type emitter pE layer 2, a p type base pB layer 3, and an emitter nE layer 4 form p-n-p-n regions of a GTP thyristor. Aluminum is evaporated on the surface of the pE layer 2 and then turned alloyed with an anode electrode plate 9 using materials such as molybdenum and tungsten by an increase in temperature in vacuum. Aluminum is evaporated on the surface of the layers 4 and 3, thus forming the cathode electrode 6 and the gate electrode 5. The surface of the electrode 6 is coated with a nickel film 10, and brought into press-contact with a cathode electrode plate 8. |
