| 摘要 |
PURPOSE:To obtain the silicide Schottky diode which is stable thermally by a method wherein a Ti nitride layer is provided on an alloy of Ti used as a Schottky barrier and a semiconductor. CONSTITUTION:A thermal oxide film 2 is formed on an Si substrate 1, and then provided with an aperture, and a Ti layer 7-1 and a Ti nitride layer 7-2 are formed over the entire surface by the sputtering method. Thereafter, etching is performed with a photo resist 8 as a mask, and a Ti slicide layer 9 is formed by reaction of the layer 7-1 with the Si of the substrate 1 on heat treatment. Further, a Ti silicide Schottky barrier diode is obtained by forming a Ti and Ag layer 5 and an Ag layer 6. The diode using a Ti silicide as a Schottky metal is obtained thereby, leading to the manufacture by successive variation of the Schottky barrier height in the range of 0.47-0.56eV. |
