| 摘要 |
PURPOSE:To eliminate a disadvantage of a limit in the etching selectively in a CF4 dry etching and the large defect of a pattern varying rate by etching an amorphous silicon by a plasma of chlorine gas as main ingredient in a parallel flat plate electrode type plasma etching device. CONSTITUTION:A mask pattern is formed by using a photoresist on an amorphous silicon film, and inserted into a parallel flat plate electrode type dry etching device. An anode power supply system is employed, or carbon tetrachloride is fed as etching gas, a plasma discharge is generated for etching. The fact that the amorphous silicon film of the hole of the mask pattern is all etched in approx. 2 and half min from the start of the etching is confirmed by the variation in the color of the film, and the etching is finished. The finishing structure at that time is in the shape that the etching is stopped by a silicon nitride film 34 even if irregular etching of the film 35 or overetching timing occur since the etching speed of the film 34 is low. |
